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IRFI4212H-117PXKMA1 Dual N-channel MOSFET half-bridge from Infineon Technologies with 100V drain-source voltage and 11A continuous drain current. Through-hole TO-220-5 full-pack package.
Mfr Part #:

IRFI4212H-117PXKMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-channel MOSFET half-bridge from Infineon Technologies with 100V drain-source voltage and 11A continuous drain current. Through-hole TO-220-5 full-pack package.
Total Stock: 6,020 pcs
$ Price Range: $0.98 - $2.77

IRFI4212H-117PXKMA1 Available from 1 distributor

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Non-Authorised
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6,020 pcs
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IRFI4212H-117PXKMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drain-to-source breakdown voltage
Gate Charge (Qg) (Max) @ Vgs
Gate Charge (Typical)
Gate Threshold Voltage Coefficient
Input Capacitance (Ciss) (Max) @ Vds
Internal Gate Resistance (Typical)
Junction to Case Thermal Resistance (Maximum)
Junction-to-Ambient Thermal Resistance (Maximum)
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Switching Charge (Typical)
Tape & Reel
Technology
Vgs(th) (Max) @ Id
drain_source_on_resistance (Typical/Maximum @ Id = 6.6 A, Vgs = 10 V)
gate_threshold_voltage (Minimum/Typical)

IRFI4212H-117PXKMA1 Description

Short technical summary and product information.

IRFI4212H-117PXKMA1 is an integrated half-bridge package containing two N-channel power MOSFET switches from Infineon Technologies. The device is specifically designed for Class D audio amplifier applications, combining two MOSFETs to reduce part count and improve PCB layout efficiency.

 

Key electrical ratings include a drain-to-source voltage of 100V, continuous drain current of 11A at Tc=25°C, and maximum power dissipation of 18W. On-resistance is 58mΩ typical and 72.5mΩ maximum at Vgs=10V, while gate charge is 12nC typical and 18nC maximum. Maximum input capacitance is 490pF at Vds=50V. These parameters support high-efficiency switching and low total harmonic distortion.

 

The device is housed in a through-hole TO-220-5 full-pack package with formed leads and a lead-free finish. It operates over a junction temperature range of -55°C to 150°C. Thermal resistance is 7.1°C/W junction-to-case. The half-bridge topology can deliver up to 150W per channel into a 4Ω load, making it suitable for cost-effective Class D amplifier output stages.

IRFI4212H-117PXKMA1 Quick Information

Product Type: Dual N-Channel MOSFET Array
Series: IRFI4212H-117P
Canonical Name: Dual N-Channel MOSFET Half-Bridge, 100V, 11A, TO-220-5
Subcategory: Half-Bridge MOSFET

IRFI4212H-117PXKMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free Package

IRFI4212H-117PXKMA1 Estimated Pricing

Qty Low High
1+ $2.77 $2.77
10+ $1.68 $1.68
100+ $1.31 $1.31
500+ $1.10 $1.10
1,000+ $1.04 $1.04
5,000+ $0.98 $0.98

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFI4212H-117PXKMA1 Features

  • Integrated half-bridge for Class D audio amplifiers.
  • Rated for 100V drain-source voltage.
  • Supports 11A continuous drain current.
  • Low on-resistance improves amplifier efficiency.
  • Lead-free TO-220-5 through-hole package.

IRFI4212H-117PXKMA1 Applications

  • Ideal for Class D audio output stages.
  • Supports 150W per channel into 4Ω loads.
  • Designed for high-efficiency switching applications.
  • Used in half-bridge power amplifier circuits.

IRFI4212H-117PXKMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

The drain-to-source voltage rating is 100V.

What package is the IRFI4212H-117PXKMA1 available in?

TO-220-5 Full Pack with formed leads, through-hole mounting.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the device RoHS compliant?

RoHS3 compliant according to existing database records.

What is the typical on-resistance at Vgs = 10V?

58mΩ typical and 72.5mΩ maximum at Id = 6.6A and Vgs = 10V.

What is the gate charge of this MOSFET?

Gate charge is 12nC typical and 18nC maximum at Vgs = 10V.

Does this device have a half-bridge configuration?

Yes, it integrates two N-channel MOSFETs in a half-bridge configuration.

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