| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Nominal @ Tc=100 °C, VGS=10 V) | |
| Current | |
| Drain to Source Leakage Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Switching) | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Internal Gate Resistance | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Style | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Energy | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| power_dissipation (Maximum @ TC=100 °C) |
The IRFI4212H-117P is a dual N-Channel power MOSFET from Infineon Technologies, configured as an integrated half-bridge in a TO-220-5 Full-Pak package. It is designed for Class-D audio amplifier applications, with key parameters optimized for efficiency, total harmonic distortion (THD), and EMI performance.
Electrical characteristics include 100V drain-to-source breakdown voltage, ±20V gate-to-source voltage, 11A continuous drain current at 25°C (6.8A at 100°C), 44A pulsed drain current, and maximum on-resistance of 72.5mΩ at VGS=10V, ID=6.6A. Gate charge is 18nC max at VGS=10V, with 6.9nC switching charge and 3.4Ω internal gate resistance.
The device integrates two MOSFET switches in a half-bridge configuration, reducing part count and enabling better PCB layout. It features a lead-free package and operates over a junction temperature range of -55°C to 150°C, with 18W power dissipation at 25°C case temperature. The through-hole TO-220-5 Full-Pak package provides thermal resistance of 7.1°C/W junction-to-case.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V minimum.
The device is available in a TO-220-5 Full-Pak through-hole package with 5 pins.
The junction operating temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant (unverified) and the package is lead-free.
Continuous drain current is 11A at a case temperature of 25°C with VGS=10V, and 6.8A at 100°C.
On-resistance is 58mΩ typical and 72.5mΩ maximum at VGS=10V, ID=6.6A.
Total gate charge is 12nC typical and 18nC maximum at VGS=10V.