| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current Continuous (@ TC=25 °C, VGS=10 V) | |
| Drain Current Continuous (@ Tc=100 °C, Vgs=10 V) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Typical @ Vgs=10 V) | |
| Drain-to-source breakdown voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Charge (Qsw) (Typical) | |
| Gate Charge Total (Typical) | |
| Gate Threshold Voltage (Minimum/Maximum @ ID=50 µA) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Internal Gate Resistance (Typical) | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (@ Tc=100 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Energy | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRFI4019H-117P is a Digital Audio MOSFET half-bridge from Infineon Technologies, specifically designed for Class D audio amplifier applications. It integrates two N-Channel power MOSFET switches in a half-bridge configuration, reducing component count and simplifying PCB layout.
Key electrical specifications include a drain-to-source voltage (Vdss) of 150V, continuous drain current of 8.7A at 25°C, and a maximum drain-source on-resistance of 95 mOhm at 10V. The device features optimized gate charge (typical 13 nC total) and low internal gate resistance (typical 2.5 Ohm) to improve efficiency, total harmonic distortion (THD), and EMI performance in Class D amplifiers.
The device is through-hole mounted in a TO-220-5 Full Pack package, offering a junction-to-case thermal resistance of 6.9 °C/W and a maximum operating junction temperature of 150°C. It is capable of delivering up to 200W per channel into an 8 Ohm load in a half-bridge configuration.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.11 | $1.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 150V.
The continuous drain current is 8.7A at 25°C and 6.2A at 100°C, with VGS=10V.
The maximum on-resistance is 95 mOhm at VGS=10V and ID=5.2A. The typical on-resistance at VGS=10V is 80 mOhm.
The operating junction temperature range is -55°C to 150°C.
The device is housed in a TO-220-5 Full Pack package with through-hole mounting.
The gate threshold voltage ranges from 3.0V (minimum) to 4.9V (maximum) at ID=50µA.
The maximum total gate charge is 20 nC at VGS=10V, with a typical value of 13 nC.