IRFI1010NPBF N-Channel MOSFET, 55V drain-to-source voltage, 49A continuous drain current, 12mOhm on-resistance at 26A, 10V gate drive.
Mfr Part #:

IRFI1010NPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 55V drain-to-source voltage, 49A continuous drain current, 12mOhm on-resistance at 26A, 10V gate drive.
✓ Total Stock: 1,000 pcs

IRFI1010NPBF Available from 1 distributor

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IRFI1010NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFI1010NPBF Description

Short technical summary and product information.

The Infineon Technologies IRFI1010NPBF is an N-Channel enhancement mode power MOSFET built with MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications requiring a drain-to-source voltage rating of 55V and a continuous drain current of 49A at case temperature. The device features a maximum on-resistance of 12mOhm at a gate-to-source voltage of 10V and drain current of 26A.

 

The IRFI1010NPBF offers a maximum gate threshold voltage of 4V at 250µA drain current and a typical gate charge of 130nC at 10V gate bias for fast switching. Input capacitance is 2900pF at 25V drain-to-source voltage. Maximum power dissipation is 58W at case temperature, and the junction operating temperature range is -55°C to 150°C.

 

Packaged in a through-hole TO-220-3 Full Pack (TO-220AB Full-Pak) for isolated mounting, this MOSFET is suitable for motor control, power supplies, and DC-DC converter applications where high efficiency and thermal performance are required. The full-pack package provides electrical isolation between the mounting surface and the die.

IRFI1010NPBF Quick Information

Product Type: Single MOSFET
Canonical Name: Infineon Technologies IRFI1010NPBF N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IRFI1010NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFI1010NPBF Features

  • N-Channel MOSFET with 55V drain rating.
  • Continuous drain current of 49 Amps.
  • 12mOhm maximum on-resistance at 10V drive.
  • Through-hole TO-220-3 Full Pack package.
  • -55°C to 150°C operating junction temperature.

IRFI1010NPBF Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor drive applications.
  • Suitable for power supply designs.
  • Applicable in high-efficiency switching regulators.

IRFI1010NPBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRFI1010NPBF?

The drain-to-source voltage (Vdss) is 55V.

What is the maximum continuous drain current of this MOSFET?

Maximum continuous drain current (Id) is 49A at case temperature (Tc).

What is the on-resistance of the IRFI1010NPBF?

Maximum on-resistance (Rds on) is 12mOhm at 26A drain current and 10V gate-to-source voltage.

What is the operating temperature range of the IRFI1010NPBF?

The operating junction temperature range is -55°C to 150°C.

In what package is the IRFI1010NPBF available?

It is supplied in a through-hole TO-220-3 Full Pack (TO-220AB Full-Pak) package.

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