IRFHS9351TRPBF

The IRFHS9351TRPBF is a dual P-Channel MOSFET from Infineon Technologies, part of the HEXFET Power MOSFET family. It integrates two independent P-Channel MOSFETs in a compact 2x2mm PQFN package, designed for space-constrained applications.

Key electrical specifications include a maximum drain-to-source voltage of 30V, gate-to-source voltage of ±20V, and continuous drain current of 2.3A at 25°C ambient (3.4A at 25°C case limited). Pulsed drain current capability reaches 20A. The on-resistance is 170mΩ maximum at Vgs=-10V and Id=3.1A. Gate charge is 3.7nC, and input capacitance is 160pF, enabling efficient switching.

Thermal characteristics include a maximum power dissipation of 1.4W at 25°C ambient, with a linear derating factor of 0.01 W/°C. The operating junction temperature range is -55°C to 150°C. Thermal resistance from junction to PCB is 19°C/W. The device is surface mounted in a 6-VQFN Exposed Pad package (6-PQFN 2x2mm) and is supplied in tape and reel with 4000 units per reel.

Typical applications include charge and discharge switches for battery management, system/load switches, and power management in portable electronics. The logic level gate drive (threshold up to 2.4V) allows direct control from low-voltage logic.