Mfr Part #:

IRFHS8342TRPBF

N-Channel MOSFET, 30V drain-source voltage, 8.8A continuous drain current at 25°C ambient, 19A at case temperature, 16mΩ on-resistance at 10V gate drive. Surface mount package TSDSON-6 (PQFN 2mm x 2mm).

✓ Total Stock: 1,000 pcs

IRFHS8342TRPBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFHS8342TRPBF Description

Short technical summary and product information.

The IRFHS8342TRPBF is an N-Channel power MOSFET from Infineon Technologies' HEXFET family. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 8.8A at ambient temperature (Ta=25°C) and 19A at case temperature (Tc=25°C). The device offers a low on-resistance of 16mΩ maximum at Vgs=10V and Id=8.5A, enabling efficient power switching.

This MOSFET is designed for applications such as control MOSFET for buck converters and system/load switching. It supports gate drive voltages of 4.5V and 10V, with a typical gate charge of 4.2nC at 4.5V and maximum 8.7nC at 10V. The input capacitance is 600pF at Vds=25V.

The device is housed in a compact 6-PowerVDFN package (PG-TSDSON-6, PQFN 2mm x 2mm) for surface mount assembly. It has a maximum power dissipation of 2.1W at ambient temperature and operates over a junction temperature range of -55°C to 150°C. The package offers low thermal resistance to the PCB for improved thermal management.

IRFHS8342TRPBF Quick Information

Product Type: MOSFET

Series: HEXFET

Canonical Name: N-Channel MOSFET, 30V, 8.8A/19A, TSDSON-6

Subcategory: N-Channel MOSFET

IRFHS8342TRPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead Free

IRFHS8342TRPBF Features

N-Channel MOSFET with 30V drain-source voltage.
Low on-resistance of 16mΩ at 10V gate drive.
Continuous drain current up to 19A at case temperature.
Compact PQFN 2mm x 2mm surface mount package.
RoHS compliant and MSL 1 rated.

IRFHS8342TRPBF Applications

Control MOSFET for buck converters.
System/load switch applications.
Low-voltage power management circuits.
High-density power conversion.

IRFHS8342TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package does the IRFHS8342TRPBF come in?

It is available in a 6-PowerVDFN package (PG-TSDSON-6, PQFN 2mm x 2mm) for surface mount.

Is the IRFHS8342TRPBF RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum drain-source voltage?

30V.

What is the continuous drain current rating?

8.8A at ambient temperature (Ta=25°C) and 19A at case temperature (Tc=25°C).

What is the on-resistance?

Maximum 16mΩ at Vgs=10V and Id=8.5A.

What is the gate charge?

Typical 4.2nC at Vgs=4.5V, maximum 8.7nC at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	8.8 A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.7 nC
Halogen Free	Yes
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	2.1 W (Ta)
Rds On (Max) @ Id, Vgs	16 mOhm @ 8.5A, 10V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	PG-TSDSON-6
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.35V @ 25µA