IRFHM8363TRPBF Dual N-channel MOSFET from Infineon, rated 30V drain-source voltage and 11A continuous drain current. Features low 14.9mOhm on-resistance in an 8-PowerVDFN surface-mount package.
Mfr Part #:

IRFHM8363TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-channel MOSFET from Infineon, rated 30V drain-source voltage and 11A continuous drain current. Features low 14.9mOhm on-resistance in an 8-PowerVDFN surface-mount package.
✓ Total Stock: 6,413 pcs
$ Price Range: $0.40 - $0.42

IRFHM8363TRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,413 pcs
6413 pcs On Request 1 On Request On Request On Request On Request On Request

IRFHM8363TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

IRFHM8363TRPBF Description

Short technical summary and product information.

The IRFHM8363TRPBF is a dual N-channel power MOSFET from Infineon Technologies, designed for applications requiring two independent MOSFETs in a single compact package. It is rated for a maximum drain-to-source voltage of 30V and a continuous drain current of 11A at 25°C case temperature.

 

The device features a low maximum on-resistance of 14.9mOhm at Vgs = 10V and Id = 10A, with logic-level gate drive supported for low-voltage control. Total gate charge is specified at 15nC max, and input capacitance at 1165pF, making it suitable for high-frequency switching.

 

The MOSFET is housed in an 8-PowerVDFN (also known as 8-PQFN 3.3mm x 3.3mm) surface-mount package, offering efficient thermal performance. It operates over a junction temperature range of -55°C to +150°C and dissipates up to 2.7W at 25°C case temperature.

 

The part is RoHS compliant, lead-free, and halogen-free, with MSL1 moisture sensitivity. Typical applications include power stages for high-frequency buck converters and battery protection charge/discharge switches.

IRFHM8363TRPBF Quick Information

Product Type: MOSFET Array
Series: HEXFET
Canonical Name: Dual N-Channel 30V 11A Power MOSFET Array
Subcategory: Dual N-Channel Power MOSFET

IRFHM8363TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IRFHM8363TRPBF Estimated Pricing

Qty Low High
4,000+ $0.42 $0.42
8,000+ $0.40 $0.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFHM8363TRPBF Features

  • Dual N-channel 30V MOSFET in PQFN.
  • 11A continuous drain current rating.
  • Low 14.9mOhm on-resistance at 10V.
  • Handles logic-level gate drive voltages.
  • RoHS compliant with lead-free construction.

IRFHM8363TRPBF Applications

  • High-frequency buck converter power stages.
  • Battery protection charge and discharge switches.
  • For low-voltage power management circuits.

IRFHM8363TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFHM8363TRPBF?

30V.

What is the continuous drain current rating?

11A at Tc=25°C with Vgs=10V.

What is the on-resistance of this MOSFET?

14.9 mOhm maximum at Vgs=10V, Id=10A.

What is the operating temperature range?

-55°C to +150°C junction temperature.

What package is the IRFHM8363TRPBF available in?

8-PowerVDFN (also known as 8-PQFN 3.3mm x 3.3mm) surface-mount package.

Is the IRFHM8363TRPBF RoHS compliant?

Yes, RoHS compliant, lead-free and halogen-free.

What is the gate threshold voltage?

Maximum 2.35V at Id=25µA.

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