IRFHM8330TRPBF The Vishay Dale IRFHM8330TRPBF is a HEXFET® Power MOSFET with a 30V drain-source breakdown voltage and low on-resistance. It comes in a compact PQFN 3.3mm x 3.3mm package.
Mfr Part #:

IRFHM8330TRPBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRFHM8330TRPBF is a HEXFET® Power MOSFET with a 30V drain-source breakdown voltage and low on-resistance. It comes in a compact PQFN 3.3mm x 3.3mm package.
✓ Total Stock: 29,170 pcs

IRFHM8330TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
26,960 pcs
26960 pcs On Request 1 On Request On Request 15+ On Request On Request
Non-Authorised Inventory information
2,210 pcs
2210 pcs On Request 1 On Request On Request 13+ On Request On Request

IRFHM8330TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Tape & Reel

IRFHM8330TRPBF Description

Short technical summary and product information.

The IRFHM8330TRPBF from Vishay Dale is a HEXFET® Power MOSFET designed for various applications including charge/discharge switches for notebook PC batteries, system/load switches, and control MOSFETs for synchronous buck converters.

 

This MOSFET features a drain-source breakdown voltage (VDS) of 30V. Its on-resistance (RDS(on)) is specified at a maximum of 6.6mΩ when VGS is 10V and ID is 20A, and 9.9mΩ when VGS is 4.5V and ID is 16A. The total gate charge (Qg) is typically 20nC under specific test conditions.

 

With a low thermal resistance to PCB of less than 3.8°C/W and a low profile of less than 1.2mm, this component offers enhanced thermal dissipation and increased power density. It utilizes an industry-standard pinout for multi-vendor compatibility and is compatible with existing surface mount techniques, facilitating easier manufacturing.

 

The device operates within a temperature range of -55°C to +150°C. It is supplied in a PQFN 3.3mm x 3.3mm package, with standard packaging quantities of 4000 units on tape and reel.

IRFHM8330TRPBF Quick Information

Product Type: MOSFET
Canonical Name: IRFHM8330TRPBF HEXFET® Power MOSFET
Subcategory: Single

IRFHM8330TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFHM8330TRPBF Features

  • 30V drain-source breakdown voltage.
  • Low on-resistance: 6.6mΩ max at 10V VGS.
  • Compact PQFN 3.3mm x 3.3mm package.
  • Low thermal resistance to PCB.
  • Suitable for battery applications.

IRFHM8330TRPBF Applications

  • Charge and discharge switch for notebooks.
  • System and load switch applications.
  • Control MOSFET for buck converters.

IRFHM8330TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (VDS) is 30V.

What is the typical on-resistance at 10V gate-source voltage?

The typical on-resistance (RDS(on)) is 6.6mΩ at VGS = 10V and ID = 20A.

What is the package type and dimensions?

The package type is PQFN with dimensions of 3.3 mm x 3.3 mm.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What is the standard package quantity?

The standard package quantity is 4000 units.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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