| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,531 pcs
|
1531 pcs | On Request | 1 | On Request | On Request | 1117+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay Dale IRFHM792TRPBF is a Dual N-Channel MOSFET belonging to the HEXFET® series. It features a maximum drain-to-source voltage of 100V and a continuous drain current of 2.3A at 25°C. The on-resistance is specified at a maximum of 195mOhm at 2.9A and 10V.
This MOSFET has a gate threshold voltage of 4V at 10µA and a maximum gate charge of 6.3nC at 10V. Input capacitance is rated at a maximum of 251pF at 25V. The maximum power dissipation is 2.3W.
Designed for surface mounting, the IRFHM792TRPBF comes in an 8-PowerVDFN package. It operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for various special-purpose applications requiring reliable switching and power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage for the IRFHM792TRPBF is 100V.
The continuous drain current at 25°C is 2.3A.
The maximum on-resistance is 195mOhm at 2.9A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The IRFHM792TRPBF is a Dual N-Channel MOSFET.
The IRFHM792TRPBF uses the 8-PowerVDFN package.
The IRFHM792TRPBF is a surface mount device.