| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,207 pcs
|
1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFH9310TRPBF is a P-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power management applications.
Key electrical specifications include a drain-source voltage rating of -30V, continuous drain current of -21A at 25°C ambient (or -40A at case temperature), and a maximum on-resistance of 4.6mOhm at Vgs=-10V. The gate threshold voltage is 2.4V maximum.
The device is housed in an industry-standard PQFN 5mm x 6mm package, suitable for surface mount assembly. It is RoHS compliant and has an MSL rating of 1 (unlimited). Typical applications include load switching, battery protection, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.52 | $0.52 |
| 8,000+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8-PowerVDFN (PQFN 5x6mm) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is marked as RoHS compliant in the datasheet, though not independently verified.
-30V.
110 nC (typical).
4.6 mOhm at Vgs=-10V, Id=21A.