| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,196 pcs
|
3196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFH8311TRPBF is an N-Channel Power MOSFET manufactured by Infineon Technologies using HEXFET technology. It is designed for synchronous MOSFET applications in high-frequency buck converters.
Key electrical specifications include a maximum drain-source voltage of 30V, a continuous drain current of 32A at 25°C ambient (169A at case temperature 25°C), and a pulsed drain current capability of 400A. The typical gate charge is 30nC at 10V gate drive. The device offers low on-resistance: 2.1mΩ maximum at 10V gate voltage with 20A drain current, and 3.2mΩ at 4.5V drive.
The MOSFET is housed in a compact PQFN 5x6 mm package with an exposed pad for efficient heat dissipation. It features low thermal resistance to the PCB (<1.3°C/W) and a low profile under 1.2mm, enabling increased power density. The operating junction temperature range is -55°C to 150°C.
The device is RoHS compliant, MSL1 rated, and compatible with standard surface mount assembly processes. It is supplied in tape and reel packaging with 4000 units per reel.
30V.
It is supplied in a PQFN 5x6 mm package (8-TQFN Exposed Pad).
-55°C to 150°C (junction).
Yes, the datasheet states it is RoHS Compliant, containing no lead, no bromide, and no halogen.
30 nC at 10V gate drive.
Maximum 2.1 mΩ at 20A drain current.
32A.