| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | 2347 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFH7004TRPBF is an N-Channel power MOSFET from Infineon's HEXFET family, designed for high-efficiency power conversion. It features a drain-source voltage rating of 40V and a continuous drain current of 100A when package-limited, with a silicon-limited capability of 259A at 25°C. The device offers a typical on-resistance of 1.1mΩ and a maximum of 1.4mΩ at Vgs=10V, enabling low conduction losses.
This MOSFET is suitable for a variety of applications including brushed and BLDC motor drives, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectification, and DC/DC converters. It provides a gate charge of 194nC maximum and input capacitance of 6419pF, supporting efficient switching performance.
The device is housed in an 8-VQFN exposed pad package (8-PQFN 5x6mm) for surface mount assembly. It is supplied in tape and reel packaging with a standard quantity of 4000 pieces. The IRFH7004TRPBF is RoHS3 compliant, lead-free, and halogen-free, meeting environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.36 | $2.36 |
| 10+ | $1.51 | $1.51 |
| 100+ | $1.03 | $1.03 |
| 500+ | $0.82 | $0.82 |
| 1,000+ | $0.75 | $0.75 |
| 2,000+ | $0.70 | $0.70 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 100A when package-limited at Tc=25°C, and 259A when silicon-limited at Tc=25°C.
Typical on-resistance is 1.1mΩ at Vgs=10V, Id=100A; maximum is 1.4mΩ at Id=100A, Vgs=10V.
The junction operating temperature range is -55°C to 150°C.
It is available in an 8-VQFN Exposed Pad package, also designated as 8-PQFN (5x6mm), for surface mount mounting.
Yes, it is RoHS3 compliant, lead-free, and halogen-free as stated in the datasheet.
The maximum gate charge (Qg) at Vgs=10V is 194 nC.