Mfr Part #:

IRFH6200TRPBF

Infineon IRFH6200TRPBF is an N-Channel Power MOSFET with 20V drain-source voltage and 100A continuous drain current (at case temp). It features a low 0.99 mΩ maximum on-resistance at 4.5V gate drive.

✓ Total Stock: 4,000 pcs

$ Price Range: $0.60 - $2.17

IRFH6200TRPBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,000 pcs On Request	4000 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IRFH6200TRPBF Description

Short technical summary and product information.

The IRFH6200TRPBF is an N-Channel power MOSFET from Infineon's HEXFET family, designed for high-efficiency power switching applications. It supports a maximum drain-to-source voltage of 20V and a continuous drain current of 100A at a case temperature of 25°C, making it suitable for low-voltage, high-current circuits.

Key electrical characteristics include a very low maximum on-resistance of 0.99 mΩ at Vgs = 4.5V and 1.5 mΩ at Vgs = 2.5V, enabling reduced conduction losses. A typical gate charge of 155 nC facilitates fast switching. The device also features low thermal resistance from junction to PCB (0.8°C/W), improving heat dissipation.

The MOSFET is housed in an industry-standard 8-PowerVDFN (PQFN 5x6mm) surface-mount package with a low profile of 0.9 mm, supporting high power density designs. It is RoHS compliant and halogen-free.

IRFH6200TRPBF Quick Information

Product Type: MOSFET (Metal Oxide)

Canonical Name: IRFH6200TRPBF

Subcategory: N-Channel Single

IRFH6200TRPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IRFH6200TRPBF Estimated Pricing

Qty	Low	High
1+	$2.17	$2.17
10+	$1.38	$1.38
100+	$0.93	$0.93
500+	$0.75	$0.75
1,000+	$0.68	$0.68
2,000+	$0.63	$0.63
4,000+	$0.60	$0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFH6200TRPBF Features

Low Rds(on) of 0.99 mΩ at 4.5V.
High continuous drain current of 100A.
Low thermal resistance of 0.8°C/W.
Industry-standard PQFN 5x6mm package.
RoHS and halogen-free compliant.

IRFH6200TRPBF Applications

Load switches for 12V bus systems.
Hot-Swap and eFuse applications.
Battery management and power distribution.

IRFH6200TRPBF FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage (Vds) for the IRFH6200TRPBF?

20 V.

What is the continuous drain current rating of the IRFH6200TRPBF?

49 A at ambient temperature (Ta = 25°C) and 100 A at case temperature (Tc = 25°C).

What is the typical on-resistance of the IRFH6200TRPBF?

Maximum on-resistance is 0.99 mΩ at Vgs = 4.5V and 1.50 mΩ at Vgs = 2.5V.

What package does the IRFH6200TRPBF come in?

8-PowerVDFN (PQFN 5x6mm) surface-mount package.

Is the IRFH6200TRPBF RoHS compliant?

Yes, the datasheet states RoHS compliant and halogen-free.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	49 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V ~ 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 4.5 V
Halogen Free	Halogen-Free
Height	0.9 mm
Input Capacitance (Ciss) (Max) @ Vds	10890 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	3.6 W
Rds On (Max) @ Id, Vgs	0.95 mΩ
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	8-PQFN (5x6)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.1 V