IRFH5306TR2PBF N-Channel MOSFET, 30V drain-source voltage, 15A continuous drain current, 8.1mΩ on-resistance at 10V. Surface mount PQFN 5x6 package.
Mfr Part #:

IRFH5306TR2PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 30V drain-source voltage, 15A continuous drain current, 8.1mΩ on-resistance at 10V. Surface mount PQFN 5x6 package.
✓ Total Stock: 410 pcs

IRFH5306TR2PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
400 pcs
400 pcs On Request 1 On Request On Request 1002 On Request On Request
Non-Authorised Inventory information
10 pcs
10 pcs On Request 1 On Request On Request On Request On Request On Request

IRFH5306TR2PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

IRFH5306TR2PBF Description

Short technical summary and product information.

The IRFH5306TR2PBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-source voltage of 30V and a continuous drain current of 15A at 25°C ambient (44A at case temperature 25°C). The device has a low on-resistance of 8.1mΩ maximum at 10V gate drive.

 

Designed for use as a control MOSFET in buck converters, it offers low gate charge (typical 7.8nC) and low thermal resistance to the PCB ( < 4.9°C/W). The maximum power dissipation is 3.6W at 25°C ambient and 26W at case temperature 25°C.

 

The MOSFET is housed in a surface-mount PQFN 5x6 mm package (8-PowerVDFN) with a supplier device package of PQFN (5x6) Single Die. It is RoHS compliant, lead-free, and halogen-free, with an MSL rating of 1 (unlimited). The standard pack quantity is 4000 pcs on tape and reel.

IRFH5306TR2PBF Quick Information

Product Type: MOSFET
Canonical Name: IRFH5306TR2PBF
Subcategory: N-Channel

IRFH5306TR2PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IRFH5306TR2PBF Features

  • N-Channel Power MOSFET with 30V Vds.
  • Low on-resistance: 8.1mΩ at 10V gate.
  • High current: 44A at case temperature 25°C.
  • Low gate charge: typical 7.8nC.
  • Surface mount PQFN 5x6 package.

IRFH5306TR2PBF Applications

  • Control MOSFET for buck converters.
  • DC-DC power conversion applications.
  • High-frequency switching circuits.
  • Power management in portable devices.
  • Load switch applications.

IRFH5306TR2PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for IRFH5306TR2PBF?

The package is PQFN 5x6 mm (8-PowerVDFN) with supplier device package PQFN (5x6) Single Die.

What is the operating temperature range?

-55 to +150°C

Is the IRFH5306TR2PBF RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the maximum drain-source voltage?

30V

What is the continuous drain current rating?

15A at 25°C ambient, 44A at 25°C case temperature, 28A at 100°C case temperature.

What is the gate threshold voltage range?

Maximum 2.35V at 25µA drain current.

What is the mounting type?

Surface mount.

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