| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | 1003 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRFH5302TR2PBF is an N-Channel power MOSFET from Infineon Technologies, fabricated using MOSFET (Metal Oxide) technology. It features a drain-source voltage rating of 30V and a continuous drain current of 32A at ambient temperature 25°C (Vgs=10V). At case temperature 25°C, the device can sustain up to 175A continuous drain current. The maximum Rds(on) is 2.1 mΩ at Vgs=10V and Id=50A, with a typical value of 1.8 mΩ. Total gate charge is 76 nC (typical at Vgs=10V) and input capacitance is 4400 pF.
The device is designed for low conduction losses and efficient thermal dissipation, with a junction-to-case thermal resistance of 1.2°C/W and a maximum power dissipation of 104W at Tc=25°C. It is qualified to MSL1 and is RoHS compliant, lead free, and halogen free. The operating junction temperature range is -55°C to 150°C.
Packaged in an 8-PowerVDFN (PQFN 5x6) surface mount package, the IRFH5302TR2PBF is suitable for applications such as OR-ing MOSFET for 12V bus in-rush current, synchronous MOSFET for buck converters, and battery-operated DC motor inverters.
30V.
8-PowerVDFN (PQFN 5x6) surface mount package.
-55°C to 150°C.
Yes, RoHS3 compliant, lead free, and halogen free.
32A at Ta=25°C with Vgs=10V.
76 nC total gate charge at Vgs=10V.
2.1 mΩ at Vgs=10V, Id=50A.