| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Thermal Resistance |
The Infineon IRFH5210TRPBF is a HEXFET Power MOSFET with a Drain-to-Source Voltage (VDS) of 100V and a maximum Continuous Drain Current (ID) of 100A at 25°C. It features a low On-Resistance (RDS(on)) of up to 14.9mΩ at Vgs = 10V, contributing to lower conduction losses.
This MOSFET is designed for applications such as secondary side synchronous rectification, inverters for DC motors, DC-DC brick applications, and boost converters. Its PQFN 5x6mm package offers a low profile (≤ 0.9 mm) for increased power density and is compatible with existing surface mount techniques.
The device boasts a low thermal resistance to the PCB (≤ 1.2°C/W), enabling better thermal dissipation. It is RoHS Compliant, containing no lead, bromide, or halogen, making it environmentally friendlier. The component also has an MSL1 rating, indicating increased reliability for industrial qualification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage (VDS) is 100 V.
The maximum Continuous Drain Current (ID) at 25°C is 100 A.
The maximum On-Resistance (RDS(on)) is 14.9 mΩ at Vgs = 10V.
The package type is PQFN 5x6mm.
The standard package quantity is 4000 units on tape and reel.
The IRFH5210TRPBF is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.