IRFH5206TR2PBF

The IRFH5206TR2PBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for applications requiring high efficiency and low conduction losses. The device features a drain-to-source voltage (VDS) of 60V and a continuous drain current of 16A at ambient temperature (Ta=25°C) and 89A at case temperature (Tc=25°C). The maximum RDS(on) is 6.7 mΩ at Vgs=10V and Id=50A, ensuring low power dissipation. The gate charge (Qg) is typically 40 nC at Vgs=10V, enabling fast switching. The input capacitance (Ciss) is 2490 pF at Vds=25V. The device is housed in an 8-PowerVDFN package (PQFN 5x6 mm) with a low profile of ≤0.9 mm, suitable for surface mount assembly. It offers low thermal resistance from junction to case (bottom) of 1.2 °C/W, aiding heat dissipation. The operating junction temperature range is -55°C to +150°C. The IRFH5206TR2PBF is RoHS compliant and MSL1 rated. Typical applications include secondary side synchronous rectification, DC-DC brick converters, boost converters, and inverters for DC motors.