| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,600 pcs
|
18600 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFH5110TRPBF is a 100V N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-source voltage of 100V and a continuous drain current of 11A at ambient temperature (25°C) and 63A at case temperature (25°C). The device has a maximum drain-source on-resistance of 12.4mΩ at Vgs=10V and Id=37A, with a typical gate charge of 54nC at 10V. Input capacitance is 3152pF at Vds=25V, and the gate threshold voltage is 4V at Id=100µA. The MOSFET is housed in a surface-mount 8-PowerVDFN package (8-PQFN 5x6) and is designed for applications such as secondary side synchronous rectification, DC-DC brick converters, and inverters for DC motors. It operates over a junction temperature range of -55°C to 150°C and has a low thermal resistance from junction to case of 1.1°C/W. The device is RoHS3 compliant, lead-free, halogen-free, and rated MSL1 for unlimited moisture sensitivity.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.49 | $3.49 |
| 10+ | $3.01 | $3.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The package is 8-PowerVDFN, also known as 8-PQFN (5x6), surface mount.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant as per the datasheet.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=100µA.
The maximum on-resistance is 12.4mΩ at Vgs=10V and Id=37A.
The typical gate charge (Qg) is 54nC at Vgs=10V.