IRFH5106TR2PBF IRFH5106TR2PBF is a 60V N-channel MOSFET from Infineon Technologies. It features 100A continuous drain current and low 5.6mΩ on-resistance in a 5x6mm PQFN package.
Mfr Part #:

IRFH5106TR2PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRFH5106TR2PBF is a 60V N-channel MOSFET from Infineon Technologies. It features 100A continuous drain current and low 5.6mΩ on-resistance in a 5x6mm PQFN package.
✓ Total Stock: 800 pcs

IRFH5106TR2PBF Available from 1 distributor

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800 pcs
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IRFH5106TR2PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

IRFH5106TR2PBF Description

Short technical summary and product information.

The IRFH5106TR2PBF is an N-channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion and features a drain-to-source voltage rating of 60V. The device supports a continuous drain current of up to 100A at a case temperature of 25°C (21A at an ambient temperature of 25°C). On-state resistance is a maximum of 5.6mΩ at Vgs=10V, helping minimize conduction losses in power paths.

 

The MOSFET has a typical gate charge of 50nC and a maximum gate charge of 75nC at Vgs=10V, with an input capacitance of 3090pF at Vds=25V. The gate threshold voltage is 4V maximum at a drain current of 250µA. It is rated for a gate-to-source voltage range of ±20V. These characteristics support efficient gate drive design in switching applications.

 

The device is offered in an 8-PowerVDFN surface-mount package, also known as 8-PQFN (5x6mm). It dissipates up to 114W at a case temperature of 25°C and 3.6W at an ambient temperature of 25°C. The operating junction temperature range is -55°C to 150°C. The package is compatible with standard surface-mount assembly processes and offers low thermal resistance to the PCB.

 

Applications include secondary-side synchronous rectification, DC-DC brick converters, inverters for DC motors, and boost converters. The part is RoHS compliant and rated MSL1 for industrial qualification.

IRFH5106TR2PBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: N-Channel 60V Power MOSFET
Subcategory: Single N-Channel MOSFET

IRFH5106TR2PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

IRFH5106TR2PBF Features

  • 60V N-channel drain-source voltage rating.
  • 100A continuous drain current at Tc=25°C.
  • Low maximum 5.6mΩ on-resistance.
  • RoHS3 compliant and MSL1 qualified.
  • Surface mount 5x6mm PQFN package.

IRFH5106TR2PBF Applications

  • Secondary side synchronous rectification circuits.
  • DC-DC brick power converters.
  • Inverters for DC motors.
  • Boost converter power stages.

IRFH5106TR2PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFH5106TR2PBF?

The maximum drain-to-source voltage is 60V.

What package is the IRFH5106TR2PBF available in?

It is available in an 8-PowerVDFN surface-mount package, also known as 8-PQFN (5x6mm).

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRFH5106TR2PBF RoHS compliant?

Yes, the datasheet indicates RoHS3 compliance with no lead, bromide, or halogen.

What is the maximum continuous drain current of the IRFH5106TR2PBF?

The maximum continuous drain current is 100A at Tc=25°C, and 21A at Ta=25°C.

What is the on-resistance of the IRFH5106TR2PBF?

The maximum on-resistance is 5.6mΩ at a drain current of 50A and gate-to-source voltage of 10V.

What is the gate charge of the IRFH5106TR2PBF?

Typical gate charge is 50nC, and maximum is 75nC at Vgs=10V.

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