| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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464 pcs
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464 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFH5025TRPBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 250V and a continuous drain current of 3.8A at ambient temperature (Ta=25°C) or 25A at case temperature (Tc=25°C). The maximum on-resistance is 100mOhm at Vgs=10V and Id=5.7A. The gate threshold voltage is 5V at Id=150µA, and the maximum gate-to-source voltage is ±20V.
This MOSFET utilizes HEXFET technology and offers low thermal resistance to PCB (≤0.8°C/W) for efficient heat dissipation. Typical gate charge is 37nC at Vgs=10V, and input capacitance is 2150pF at Vds=50V. The device is suitable for applications such as secondary side synchronous rectification, DC-DC brick converters, boost converters, and inverters for DC motors.
The IRFH5025TRPBF is packaged in an 8-PowerVDFN (8-PQFN 5x6) surface-mount package. It is RoHS3 compliant, halogen-free, and has an MSL rating of 1 (unlimited). The operating junction temperature range is -55°C to 150°C.
250V.
Surface-mount 8-PowerVDFN (8-PQFN 5x6) package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and halogen-free.
25A.
5V at Id=150µA.
37nC at Vgs=10V.