| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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36 pcs
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36 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Package / Case |
The Infineon IRFH5020TRPBF is a high-performance N-channel Power MOSFET housed in a compact PQFN 5x6 mm package. It is engineered for applications requiring efficient power conversion, such as secondary side synchronous rectification, DC-DC brick applications, inverters for DC motors, and boost converters.
Key electrical characteristics include a maximum drain-to-source voltage (VDS) of 200V and a maximum on-resistance (RDS(on)) of 55 mΩ at a gate-to-source voltage (VGS) of 10V. The device offers a continuous drain current (ID) of up to 200A at a case temperature of 25°C (bottom) and 34A at a case temperature of 25°C (top). Its low thermal resistance to the PCB (≤ 0.8°C/W) facilitates effective heat dissipation, while the low profile (≤ 0.9 mm) contributes to increased power density.
This MOSFET is designed for compatibility with existing surface mount techniques, simplifying manufacturing processes. It is RoHS compliant, containing no lead, bromide, or halogen, making it an environmentally friendlier choice. The component also boasts MSL1 industrial qualification, indicating increased reliability.
Available in tape and reel packaging, the IRFH5020TRPBF is suitable for automated assembly. Its industry-standard pinout ensures multi-vendor compatibility.
200 V.
±20 V.
At 25°C ambient with 10V gate drive, the continuous drain current is 63 A. With bottom-side case cooling at 25°C, it can reach 200 A.
The maximum on-resistance is 55 mΩ at VGS = 10 V.
-55°C to +150°C.
PQFN 5x6 mm, surface mount.
36 nC.