IRFH5015TR2PBF N-Channel MOSFET by Infineon Technologies with 150V drain-source voltage, 10A continuous drain current, and 31mΩ on-resistance. Surface-mount PQFN 5x6 package.
Mfr Part #:

IRFH5015TR2PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET by Infineon Technologies with 150V drain-source voltage, 10A continuous drain current, and 31mΩ on-resistance. Surface-mount PQFN 5x6 package.
✓ Total Stock: 2,800 pcs

IRFH5015TR2PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,800 pcs
2800 pcs On Request 1 On Request On Request 1047 On Request On Request

IRFH5015TR2PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature Range
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

IRFH5015TR2PBF Description

Short technical summary and product information.

The IRFH5015TR2PBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies. It is designed for applications requiring high efficiency and low conduction losses, featuring a maximum drain-to-source voltage of 150V and a continuous drain current of 10A at 25°C ambient temperature. The device offers a low on-resistance of 31mΩ maximum at 10V gate drive, which reduces power dissipation during operation.

 

This MOSFET is built with advanced HEXFET technology and provides fast switching characteristics. It supports gate charge of 50nC maximum and input capacitance of 2300pF, making it suitable for high-frequency switching circuits. The operating junction temperature range is -55°C to +150°C, ensuring robust performance in demanding environments.

 

The IRFH5015TR2PBF is supplied in a compact surface-mount PQFN 5mm x 6mm package (8-PowerVDFN) with an industry-standard pinout, enabling compatibility with automated assembly processes. It is RoHS compliant and moisture sensitive level 1 (unlimited), facilitating lead-free soldering and long-term reliability.

IRFH5015TR2PBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: IRFH5015TR2PBF N-Channel MOSFET 150V 10A 31mΩ PQFN 5x6
Subcategory: Power MOSFET

IRFH5015TR2PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFH5015TR2PBF Features

  • N-Channel enhancement-mode power MOSFET.
  • 150V drain-source voltage rating.
  • Low on-resistance of 31mΩ typical.
  • Surface-mount PQFN 5x6 package.
  • RoHS compliant and MSL1 rated.

IRFH5015TR2PBF Applications

  • Primary side synchronous rectification circuits.
  • DC-DC brick converter applications.
  • Inverters for DC motor drives.
  • Boost converter power stages.

IRFH5015TR2PBF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFH5015TR2PBF?

The maximum drain-to-source voltage is 150V.

What is the continuous drain current rating?

The continuous drain current is 10A at 25°C ambient temperature (TA) and 44A at 25°C mounting base temperature (Tmb).

What is the package type?

The device is supplied in an 8-PowerVDFN surface-mount package, also designated as PQFN 5x6 (supplier device package 8-PQFN (5x6)).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the IRFH5015TR2PBF RoHS compliant?

The datasheet indicates RoHS compliance, containing no lead, bromide, or halogen. Moisture sensitivity level is MSL1 (unlimited).

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