IRLML0060TRPBF
Infineon
The Infineon IRLML0060TRPBF is an N-channel MOSFET designed for load and system switching applications. It offers a 60V drain-to-source voltage and a continuous drain current of 2.7A.
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16,969 pcs
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16969 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Infineon IRFH5010TRPBF is a high-performance N-channel Power MOSFET. It is designed with a low RDS(on) of 9 mΩ at VGS = 10V, contributing to lower conduction losses. The device offers a continuous drain current of up to 70A at TA = 25°C and a maximum drain-to-source voltage of 100V.
This MOSFET is housed in a PQFN 5x6 mm package, offering a low profile for increased power density. It is suitable for applications such as secondary side synchronous rectification, inverters for DC motors, and DC-DC brick applications. The component is RoHS compliant and rated for MSL1 industrial qualification, ensuring increased reliability.
Key electrical characteristics include a typical gate charge of 67 nC and a typical gate resistance of 1.2 Ω. The junction-to-case thermal resistance is a maximum of 0.5°C/W, facilitating efficient heat dissipation. The operating junction and storage temperature range is -55 to +150°C.
| Qty | Low | High |
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| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100 V.
The maximum continuous drain current at TA = 25°C is 70 A.
The typical gate charge is 67 nC.
The package type is PQFN 5x6 mm.
Yes, the IRFH5010TRPBF is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.