| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,565 pcs
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1565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRFH4251DTRPBF is a dual N-Channel MOSFET array from Infineon Technologies, part of the FastIRFET series. It integrates two MOSFETs (Q1 and Q2) with a Schottky diode in a single PQFN 5x6mm package, offering increased power density for space-constrained designs.
Key electrical specifications include a drain-source breakdown voltage of 25V for both MOSFETs. Q1 supports a continuous drain current of 64A at 25°C, while Q2 supports 188A. The maximum on-resistance is 3.2mΩ at Vgs=10V and Id=30A. The device features a low gate charge of 15nC at Vgs=4.5V and a maximum gate threshold voltage of 2.1V at Id=35µA. Input capacitance is 1314pF at Vds=13V.
This MOSFET array is designed for synchronous buck converter applications, where Q1 serves as the control MOSFET and Q2 as the synchronous MOSFET. The integrated Schottky diode on Q2 reduces switching losses. The device is RoHS compliant and halogen-free, and is qualified to MSL1 for industrial applications.
The drain-source breakdown voltage is 25V for both MOSFETs.
Q1 has a continuous drain current of 64A at 25°C, and Q2 has 188A at 25°C.
The maximum on-resistance is 3.2mΩ at Vgs=10V and Id=30A.
The maximum total gate charge is 15nC at Vgs=4.5V.
The operating junction temperature range is -55°C to +150°C.
Yes, the device is RoHS compliant and halogen-free.