IRFH3702TRPBF IRFH3702TRPBF is a 30V N-Channel power MOSFET from Infineon Technologies. It features a maximum on-resistance of 7.1mΩ at VGS=10V, 16A/42A continuous drain current, and is offered in an 8-PQFN (3x3) package.
Mfr Part #:

IRFH3702TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRFH3702TRPBF is a 30V N-Channel power MOSFET from Infineon Technologies. It features a maximum on-resistance of 7.1mΩ at VGS=10V, 16A/42A continuous drain current, and is offered in an 8-PQFN (3x3) package.
✓ Total Stock: 9,020 pcs
$ Price Range: $0.21 - $0.99

IRFH3702TRPBF Available from 1 distributor

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✓ Non-Authorised
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IRFH3702TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFH3702TRPBF Description

Short technical summary and product information.

The IRFH3702TRPBF is an N-Channel power MOSFET from Infineon Technologies (HEXFET family) designed for high-efficiency power conversion. It is rated for a maximum drain-to-source voltage of 30V and a gate-to-source voltage of ±20V. The device supports continuous drain currents of 16A at 25°C ambient and 42A at 25°C case temperature, with a pulsed drain current capability of 120A.

 

The MOSFET features a low static drain-to-source on-resistance of 7.1mΩ maximum at VGS=10V and ID=16A, and 11.8mΩ maximum at VGS=4.5V and ID=12A. Its very low total gate charge (9.6nC typical) enables fast switching and reduced switching losses, making it suitable for high-frequency circuits.

 

The device is housed in a compact 8-PowerVDFN surface-mount package (also referred to as 8-PQFN 3x3), with a maximum junction-to-ambient thermal resistance of 45°C/W and junction-to-case resistance of 6.0°C/W. The operating junction temperature range is -55°C to 150°C.

 

Typical applications include synchronous buck converters for computer processor power, isolated DC-DC converters for network and telecom equipment, and buck converters for set-top boxes. The part is RoHS3 compliant, halogen-free, and lead-free.

IRFH3702TRPBF Quick Information

Product Type: N-Channel MOSFET
Series: HEXFET
Canonical Name: N-Channel 30V Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFH3702TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRFH3702TRPBF Estimated Pricing

Qty Low High
1+ $0.99 $0.99
4,000+ $0.23 $0.23
8,000+ $0.22 $0.22
12,000+ $0.21 $0.21
20,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFH3702TRPBF Features

  • N-Channel MOSFET rated for 30V.
  • 42A continuous drain current (case).
  • Low 7.1mΩ maximum on-resistance.
  • Very low 9.6nC total gate charge.
  • Surface-mount 8-PQFN 3x3mm package.

IRFH3702TRPBF Applications

  • Synchronous buck converters for processor power.
  • Isolated DC-DC converters for telecom equipment.
  • Buck converters for set-top box power.

IRFH3702TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFH3702TRPBF?

The maximum drain-to-source voltage is 30V.

What package does the IRFH3702TRPBF come in?

It is available in an 8-PowerVDFN surface-mount package, also called 8-PQFN (3x3).

What is the operating junction temperature range?

-55°C to +150°C.

Is the IRFH3702TRPBF RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to the datasheet.

What is the continuous drain current rating?

16A at TA=25°C, 12A at TA=70°C, and 42A at TC=25°C with VGS=10V.

What is the on-resistance of the IRFH3702TRPBF?

Maximum 7.1mΩ at VGS=10V and ID=16A; typical 8.7mΩ and maximum 11.8mΩ at VGS=4.5V and ID=12A.

What is the total gate charge?

The total gate charge is 9.6nC typical, with a maximum of 14nC, at VDS=15V, VGS=4.5V, ID=12A.

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