| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The Infineon Technologies IRFG9110 is a P-Channel HEXFET Power MOSFET designed for applications requiring high reliability. It offers simple drive requirements and a hermetically sealed, electrically isolated package.
Key electrical specifications include a Drain-to-Source Breakdown Voltage (BVDSS) of -100V and a maximum Static Drain-to-Source On-Resistance (RDS(on)) of 1.4Ω at a gate-source voltage of -10V and a drain current of -0.75A. The continuous drain current is rated at -0.75A at 25°C case temperature and -0.5A at 100°C case temperature. The device also features a gate threshold voltage (VGS(th)) ranging from -2.0V to -4.0V.
This MOSFET is housed in a through-hole MO-036AB package, eliminating the need for additional isolating material between the device and a heatsink, which improves thermal efficiency. The operating junction and storage temperature range is -55°C to +150°C.
Applications include switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits where high reliability is essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100V
1.4Ω
-0.75A
-2.0V to -4.0V
-55°C to +150°C
Through Hole MO-036AB