| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay IRFG6110 is a through-hole mounted Power Field-Effect Transistor. It is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
Key electrical specifications include a breakdown voltage of 100V and a drain-source on-resistance of 800mΩ. The maximum power dissipation is rated at 1.4W.
This MOSFET operates within a temperature range of -55°C to 150°C. Its efficient geometry design contributes to low on-state resistance and high transconductance, making it a reliable choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRFG6110 is 100V.
The maximum operating temperature for the IRFG6110 is 150°C.
The drain-source resistance of the IRFG6110 is 800mΩ.
The IRFG6110 is a through-hole mounted component.