| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The Infineon Technologies IRFG6110 is a dual power MOSFET utilizing HEXFET technology, designed for high-reliability applications. This device features a 100V Drain-to-Source Breakdown Voltage and is available in both N-Channel and P-Channel configurations.
Key electrical specifications include a maximum continuous drain current of 1.0A for the N-Channel and -0.75A for the P-Channel at 25°C, with a maximum power dissipation of 1.4W. The N-Channel variant offers a typical on-resistance of 0.7 Ohm at 1.0A and VGS of ±10V, while the P-Channel has a typical on-resistance of 1.4 Ohm at -0.75A and VGS of ±10V.
The MOSFET operates within a junction temperature range of -55°C to 150°C and has a storage temperature range of the same limits. It is housed in a MO-036AB package and supports through-hole mounting.
This HEXFET transistor is well-suited for applications such as switching power supplies, motor controls, inverters, and high energy pulse circuits where high reliability is essential. The hermetically sealed and electrically isolated package improves thermal efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the N-Channel IRFG6110 is 1.0A at TC = 25°C and VGS = ±10V.
The maximum continuous drain current for the P-Channel IRFG6110 is -0.75A at TC = 25°C and VGS = ±10V.
The maximum power dissipation for the IRFG6110 is 1.4W at TC = 25°C.
The operating junction temperature range for the IRFG6110 is -55°C to 150°C.
The IRFG6110 is supplied in the MO-036AB package.
The IRFG6110 is designed for through-hole mounting.