| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IRFG5110 from Vishay Dale is an N-Channel HEXFET Power MOSFET. It is designed with advanced MOSFET technology to achieve low on-state resistance. This component has a drain-source voltage rating of 100V and a continuous drain current of 1.0A. The typical on-resistance is specified at 0.7 Ohms.
The IRFG5110 is packaged in a MO-036AB through-hole package, making it suitable for applications requiring robust mounting.
This MOSFET is part of Vishay Dale's line of power transistors, leveraging efficient geometry design for optimal performance in power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFG5110 has a typical RDS(on) of 0.7 Ohm.
The drain-source voltage (VDS) of the IRFG5110 is 100 V.
The IRFG5110 has a continuous drain current (ID) of 1.0 A.
The IRFG5110 is packaged in a MO-036AB case.
The IRFG5110 uses through-hole mounting.
Yes, it is RoHS3 compliant.