| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies IRFG5110 is a Combination Power MOSFET designed for various electronic applications. It utilizes HEXFET MOSFET technology, known for its efficient geometry and low on-state resistance.
Key electrical characteristics include a drain-source voltage of 100V and a continuous drain current of 1.0A. The typical on-resistance is specified at 0.7 Ohms. This MOSFET is packaged in a MO-036AB case and is designed for through-hole mounting.
This component is suitable for applications requiring efficient power switching and control. Its robust design and specifications make it a reliable choice for engineers designing power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 100V.
The continuous drain current is 1.0A.
The typical on-resistance is 0.7 Ohms.
The IRFG5110 is in a MO-036AB package.
The IRFG5110 is mounted through hole.