LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The HAR IRFF9230 is a P-Channel HEXFET Power MOSFET from Infineon Technologies, designed for high-reliability applications. This transistor features a breakdown voltage of -200V and a low static drain-to-source on-resistance of 0.80Ω at a gate-to-source voltage of -10V and a drain current of -2.4A. It is hermetically sealed and offers repetitive avalanche ratings and dynamic dv/dt rating, making it suitable for demanding applications.
The HEXFET technology ensures efficient geometry and unique processing for low on-state resistance and high transconductance. Advantages of MOSFETs such as voltage control, fast switching, and temperature stability are maintained. The IRFF9230 is well-suited for use in switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high-energy pulse circuits.
Packaged in a TO-205AF (TO-39) through-hole package, this MOSFET operates within a junction and storage temperature range of -55°C to +150°C. Its thermal resistance from junction-to-case is 5.0°C/W, and junction-to-ambient is 175°C/W.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) of the IRFF9230 is -200V.
The static drain-to-source on-resistance (RDS(on)) is 0.80Ω at VGS = -10V and ID = -2.4A.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFF9230 is supplied in a TO-205AF (TO-39) through-hole package.
