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55 pcs
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55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFF9230 is a P-Channel HEXFET Power MOSFET manufactured by Intersil, designed for high-reliability applications. It offers a breakdown voltage of -200V and a low on-resistance of 0.80Ohm at a continuous drain current of -4.0A (VGS = -10V, TC = 25°C).
Key features include repetitive avalanche ratings and dynamic dv/dt rating, making it suitable for demanding applications. The device is hermetically sealed and simple to drive, with an ESD rating of Class 1C per MIL-STD-750. Its HEXFET technology ensures efficient geometry and unique processing for low on-state resistance and high transconductance.
This MOSFET is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It comes in a TO-39 (TO-205AF) through-hole package.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is -200V.
The static drain-to-source on-resistance is a maximum of 0.80Ohm.
The continuous drain current is -4.0A at 25°C case temperature and -2.4A at 100°C case temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFF9230 is available in a TO-39 package and is designed for through-hole mounting.