LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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7,400 pcs
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7400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRFF9230 is a high-reliability P-Channel Power MOSFET designed for demanding applications. It features a breakdown voltage of -200V and a low on-state resistance of 0.80Ω at a continuous drain current of -4.0A (VGS = -10V, TC = 25°C).
This HEXFET transistor utilizes advanced technology for efficient geometry and processing, offering advantages such as voltage control, fast switching, and temperature stability. The device is hermetically sealed and rated for repetitive avalanche and dynamic dv/dt.
Key electrical characteristics include a gate threshold voltage ranging from -2.0V to -4.0V and a maximum power dissipation of 25W at 25°C case temperature. The MOSFET is supplied in a TO-39 through-hole package, suitable for various power switching applications including switching power supplies, motor controls, and inverters.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) is -200V.
The static drain-to-source on-resistance (RDS(on)) is a maximum of 0.80Ω at VGS = -10V and ID2 = -2.4A.
The gate threshold voltage (VGS(th)) ranges from -2.0V to -4.0V.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFF9230 is supplied in a TO-39 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
