| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The IRFF9130 is a P-Channel HEXFET power MOSFET designed for high-reliability applications. It features a drain-to-source breakdown voltage of -100V and a low static drain-to-source on-resistance of 0.30 Ohms at a gate-to-source voltage of -10V and a drain current of -6.5A. The device also offers a maximum continuous drain current of -6.5A at 25°C case temperature and -4.1A at 100°C case temperature.
This MOSFET is well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It utilizes HEXFET technology for efficient geometry and unique processing, providing low on-state resistance and high transconductance. The device benefits from voltage control, fast switching, and temperature stability of electrical parameters.
The IRFF9130 is packaged in a TO-39 through-hole package. It has a maximum power dissipation of 25W at 25°C case temperature and a junction-to-case thermal resistance of 5.0°C/W. The operating junction and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is -100V at VGS = 0V and ID = -1mA.
The IRFF9130 is available in a TO-39 through-hole package.
The operating junction and storage temperature range is -55°C to +150°C.
The maximum on-resistance is 0.30Ω at VGS = -10V, ID = -6.5A, and 0.320Ω at VGS = -10V, ID = -4.1A.
The continuous drain current is -6.5A at TC = 25°C and -4.1A at TC = 100°C (VGS = -10V).
The gate threshold voltage (VGS(th)) ranges from -2V to -4V at VDS = VGS and ID = -250µA.
The typical total gate charge is 14.7nC, with a maximum of 34.8nC at VDS = -50V, VGS = -10V, ID = -6.5A.
