| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
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| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology |
The IRFF9122 is a P-Channel Power MOSFET manufactured by Harris Semiconductor. This device is designed for switching and amplification applications requiring a P-Channel enhancement-mode MOSFET. Key electrical specifications include a drain-source voltage (Vdss) of 100V, a continuous drain current of 3.5A, and a maximum power dissipation of 20W. The MOSFET utilizes Metal Oxide (MOSFET) technology and is housed in a TO-205AF Metal Can package, which is a through-hole mounting type suitable for various PCB designs. The part is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 167+ | $1.80 | $1.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 100V.
The continuous drain current is 3.5A.
The maximum power dissipation is 20W.
The IRFF9122 is available in a TO-205AF Metal Can (TO-39) through-hole package.
Yes, the IRFF9122 is RoHS3 compliant.
The IRFF9122 is a P-Channel MOSFET.