LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFF9120 is a high-reliability P-Channel Power MOSFET designed using HEXFET technology. It offers a breakdown voltage of -100V and a low static drain-to-source on-resistance of 0.60 Ohms at -4.0A continuous drain current. This MOSFET is rated for a maximum continuous drain current of -4.0A at 25°C and -2.6A at 100°C, with a pulsed drain current capability of -16A.
Key electrical characteristics include a gate threshold voltage ranging from -2.0V to -4.0V and a forward transconductance of 1.25S. The device also features repetitive avalanche ratings and dynamic dv/dt rating, making it suitable for demanding applications. Its hermetically sealed TO-39 package ensures reliability.
Applications for the IRFF9120 include switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The HEXFET technology provides advantages such as voltage control, fast switching, and temperature stability.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage (BVDSS) of the IRFF9120 is -100V.
The IRFF9120 is packaged in a TO-205AF (TO-39) through-hole case.
The maximum RDS(on) is 0.65 Ohms at VGS = -10V.
The gate threshold voltage (VGS(th)) is -2V.
The maximum continuous drain current at 25°C is -4.0A.
The maximum power dissipation is 20W.
Yes, it is RoHS3 compliant.
