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21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRFF9120 is a P-Channel HEXFET power MOSFET designed for high-reliability applications. It utilizes HEXFET technology for efficient geometry and processing, achieving low on-state resistance and high transconductance.
Key electrical characteristics include a Drain-to-Source Breakdown Voltage (BVDSS) of -100V and a Static Drain-to-Source On-Resistance (RDS(on)) of 0.60 Ohms at VGS = -10V, ID2 = -2.6A. The continuous drain current (ID1) is rated at -4.0A at 25°C case temperature.
This MOSFET is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. It is housed in a hermetically sealed TO-39 (TO-205AF) package suitable for through-hole mounting.
Features such as Repetitive Avalanche Ratings and Dynamic dv/dt Rating are also highlighted, making it a robust choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Breakdown Voltage (BVDSS) is -100V.
The typical Static Drain-to-Source On-Resistance (RDS(on)) is 0.60 Ohms at VGS = -10V, ID2 = -2.6A.
The continuous drain current (ID1) is -4.0A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFF9120 is supplied in a TO-39 (TO-205AF) package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.