| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | MX 0515 | On Request | On Request |
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| SVHC Present |
The IRFF130 is a high-reliability N-Channel Power MOSFET designed for demanding applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 8A at 25°C case temperature. The MOSFET exhibits a low static drain-source on-state resistance, with a typical value of 0.18 Ohms at VGS = 10V and ID = 5.0A pulsed.
This device is available with high-reliability screening per MIL-PRF-19500, JANTX level, making it suitable for defense and aerospace applications. It operates across a wide temperature range from -55°C to +150°C. The MOSFET is available in standard and RoHS-compliant versions.
Key electrical characteristics include a gate-source voltage threshold between 2.0V and 4.0V, and a forward transconductance of at least 3.0 S. Dynamic characteristics include gate charge values such as Qg(on) of 28.51 nC typical. Switching times are also specified, with turn-on delay at 30 ns typical and fall time at 45 ns typical.
The IRFF130 is designed for through-hole mounting. Its robust construction and high-reliability options make it a suitable choice for power management circuits requiring dependable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRFF130 is rated for a maximum drain-source voltage of 100V.
The continuous drain current is 8.0A at TC=+25°C and derates to 5.0A at TC=+100°C.
The static drain-source on-resistance is maximum 0.18Ω at VGS=10V and ID=5.0A pulsed.
The operating and storage temperature range is -55°C to +150°C.
The gate-source threshold voltage ranges from 2.0V to 4.0V at VDS ≥ VGS, ID=0.25mA.
The typical total gate charge is 28.51nC at VGS=10V, ID=8.0A, VDS=50V.
The thermal resistance junction-to-case is 5.0°C/W.
