| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,565 pcs
|
6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD9220PBF is a P-Channel power MOSFET from Vishay Dale designed for medium-voltage switching applications. It offers a maximum drain-source voltage of 200V and a continuous drain current of 560mA at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 1.5Ω at Vgs=10V and Id=340mA, a typical gate charge of 15nC, and an input capacitance of 340pF. The device is rated for a maximum power dissipation of 1W and can operate over a junction temperature range of -55°C to +150°C.
The MOSFET is housed in a 4-pin HVMDIP package, which supports automatic insertion and can be stacked on standard 0.1" pin centers. The dual drain pins provide a thermal path to the mounting surface for effective heat dissipation.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $1.11 | $1.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 560mA at 25°C ambient temperature.
The operating junction temperature range is -55°C to +150°C.
The maximum drain-source on-resistance is 1.5Ω at Vgs=10V and Id=340mA.
The device is available in a 4-pin HVMDIP package.