IRFD9210 IRFD9210 is a P-Channel Power MOSFET from Vishay Siliconix with -200V drain-source voltage, 0.4A continuous drain current, and 3Ω on-resistance. Housed in a 4-DIP through-hole package.
Mfr Part #:

IRFD9210

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFD9210 is a P-Channel Power MOSFET from Vishay Siliconix with -200V drain-source voltage, 0.4A continuous drain current, and 3Ω on-resistance. Housed in a 4-DIP through-hole package.
✓ Total Stock: 6 pcs
$ Price Range: $1.64

IRFD9210 Available from 1 distributor

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✓ Non-Authorised
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6 pcs
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IRFD9210 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFD9210 Description

Short technical summary and product information.

The IRFD9210 is a P-Channel enhancement-mode Power MOSFET from Vishay Siliconix, designed for medium-voltage switching applications. It features a maximum drain-source voltage of -200V and a continuous drain current of -0.4A at 25°C. The device offers a low on-resistance of 3Ω (max) at Vgs = -10V, enabling efficient power management.

 

This MOSFET is housed in a 4-DIP (0.300", 7.62mm) through-hole package, also known as HVMDIP, which supports automatic insertion and end-stackable configurations. The dual drain pins provide a thermal link to the mounting surface, allowing power dissipation up to 1W at 25°C ambient.

 

Key electrical characteristics include a gate threshold voltage range of -2.0V to -4.0V, total gate charge of 8.9nC, and input capacitance of 170pF. The device is rated for repetitive avalanche energy and features a dynamic dV/dt rating, making it suitable for rugged industrial environments.

IRFD9210 Quick Information

Product Type: Power MOSFET
Canonical Name: IRFD9210 P-Channel Power MOSFET, -200V, 0.4A, 3Ω, 4-DIP
Subcategory: P-Channel MOSFET

IRFD9210 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

IRFD9210 Estimated Pricing

Qty Low High
2,500+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFD9210 Features

  • P-Channel Power MOSFET with -200V Vds.
  • Continuous drain current of -0.4A at 25°C.
  • Low on-resistance of 3Ω at Vgs=-10V.
  • Through-hole 4-DIP package for automatic insertion.
  • 1W power dissipation at 25°C ambient.

IRFD9210 Applications

  • Medium-voltage DC-DC converters and inverters.
  • Power management in industrial control systems.
  • Load switching in battery-powered equipment.
  • Motor drive circuits requiring P-Channel switching.

IRFD9210 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFD9210?

The maximum drain-source voltage (Vds) is -200V.

What is the continuous drain current rating of the IRFD9210?

The continuous drain current (Id) is -0.4A at Tc=25°C.

What is the on-resistance of the IRFD9210?

The maximum drain-source on-resistance (Rds(on)) is 3Ω at Vgs=-10V and Id=-0.24A.

What package does the IRFD9210 come in?

The IRFD9210 is available in a 4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP.

What is the operating temperature range of the IRFD9210?

The operating junction temperature range is -55°C to +150°C.

Is the IRFD9210 RoHS compliant?

The IRFD9210PbF ordering option is lead-free, but RoHS compliance is unverified.

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