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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix IRFD9120 is a P-Channel Power MOSFET designed for high-performance applications. It features a Drain-Source Voltage (VDS) of 100V and a low Drain-Source On-State Resistance (RDS(on)) of 0.60 Ω at a gate-source voltage (VGS) of -10V.
This MOSFET is housed in a HEXDIP package, suitable for automatic insertion and can be stacked. It operates at temperatures up to 175°C and offers features like dynamic dV/dt rating and repetitive avalanche rating.
Key electrical characteristics include a Gate Charge (Qg) of 18 nC maximum, Gate-Source Charge (Qgs) of 3.0 nC typical, and Gate-Drain Charge (Qgd) of 9.0 nC typical. The continuous drain current is rated at -1.0 A at 25°C and -0.70 A at 100°C.
With its robust design and specifications, the IRFD9120 is well-suited for various power switching and control applications where efficiency and reliability are critical.
The Drain-Source Breakdown Voltage (VDS) is -100 V.
The typical Gate-Source Threshold Voltage (VGS(th)) is -2 V.
The typical Drain-Source On-State Resistance (RDS(on)) is 0.6 Ω at VGS = -10 V and ID = -0.6 A.
The maximum continuous drain current (ID) at TC = 25°C is -1 A.
The maximum power dissipation (PD) at TC = 25°C is 1.3 W.
The operating junction and storage temperature range is -55 to +175 °C.
The IRFD9120 is available in a HEXDIP package.