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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFD9120 is a P-Channel Power MOSFET designed for applications requiring a combination of fast switching, ruggedized device design, and low on-resistance. This component is housed in a HEXDIP package, suitable for automatic insertion and can be stacked on standard 0.1" pin centers.
Key electrical specifications include a drain-source breakdown voltage of -100V and a gate-source threshold voltage ranging from -2V to -4V. The on-state resistance (Rds(on)) is typically 0.6Ω at a gate-source voltage of -10V. Continuous drain current is rated at -1A at 25°C and -0.7A at 100°C.
With a maximum power dissipation of 1.3W at 25°C, the IRFD9120 operates across a wide temperature range from -55°C to +175°C. The HEXDIP package features dual drains that act as a thermal link, supporting power dissipation up to 1W. This MOSFET is also available in lead-free (Pb-free) versions.
This device is suitable for various applications benefiting from its P-channel characteristics and robust design. Its features make it a cost-effective solution for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-100 V
-2 V
0.6 Ω
-1 A
1.3 W
-55 to +175 °C
HEXDIP