IRFD9120 IRFD9120 is a P-Channel power MOSFET from Vishay Dale with a drain-source voltage of -100V, continuous drain current of -1A, and on-resistance of 0.6Ω. It comes in a 4-DIP (HVMDIP) through-hole package.
Mfr Part #:

IRFD9120

Available from 4 distributors
Mfr Name: Vishay
Vishay
IRFD9120 is a P-Channel power MOSFET from Vishay Dale with a drain-source voltage of -100V, continuous drain current of -1A, and on-resistance of 0.6Ω. It comes in a 4-DIP (HVMDIP) through-hole package.
✓ Total Stock: 1,420 pcs

IRFD9120 Available from 4 distributors

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✓ Non-Authorised
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894 pcs
894 pcs On Request 1 On Request On Request 21 On Request On Request
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300 pcs
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141 pcs
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85 pcs
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IRFD9120 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFD9120 Description

Short technical summary and product information.

The IRFD9120 is a P-Channel enhancement-mode power MOSFET from Vishay Dale's third generation family, designed for fast switching and rugged performance. It features a drain-source breakdown voltage of -100V and a continuous drain current of -1A at 25°C, with a maximum on-resistance of 0.6Ω at VGS = -10V. The device is avalanche rated with a single pulse avalanche energy of 140mJ and repetitive avalanche capability.

 

The MOSFET is housed in a 4-DIP (0.300", 7.62mm) package with a supplier device package designation of 4-HVMDIP, suitable for through-hole mounting. The dual drain pins provide a thermal link to the mounting surface, enabling power dissipation up to 1.3W at 25°C ambient. The operating junction temperature range is -55°C to 175°C.

 

This part is lead-free (Pb-free) as indicated by the PbF suffix in the ordering number IRFD9120PbF. It is suitable for applications requiring high efficiency and reliability in power management and switching circuits.

IRFD9120 Quick Information

Product Type: Power MOSFET
Series: IRFD
Canonical Name: IRFD9120 P-Channel Power MOSFET, 100V, 1A, 4-DIP/HVMDIP
Subcategory: Single MOSFET

IRFD9120 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free (Pb-free)

IRFD9120 Features

  • P-Channel power MOSFET with -100V drain-source voltage.
  • Continuous drain current of -1A at 25°C ambient.
  • Low on-resistance of 0.6Ω at VGS = -10V.
  • Avalanche rated with 140mJ single pulse energy.
  • Through-hole 4-DIP (HVMDIP) package for easy insertion.

IRFD9120 Applications

  • Ideal for power management and switching circuits.
  • Suitable for DC-DC converters and motor control.
  • Used in load switching and battery protection.
  • Applicable in automotive and industrial systems.

IRFD9120 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFD9120?

The drain-source voltage (VDS) is -100V.

What is the maximum continuous drain current of the IRFD9120?

The continuous drain current is -1.0A at TA = 25°C, derated to -0.70A at TA = 100°C.

What is the on-resistance of the IRFD9120?

The maximum drain-source on-resistance is 0.6Ω at VGS = -10V and ID = 600mA.

What package does the IRFD9120 come in?

The IRFD9120 is available in a 4-DIP (0.300", 7.62mm) through-hole package, also designated as 4-HVMDIP.

What is the operating temperature range of the IRFD9120?

The operating junction temperature range is -55°C to 175°C.

Is the IRFD9120 RoHS compliant?

The part is listed as RoHS3 Compliant with low confidence. The datasheet indicates the part is lead-free (Pb-free).

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