| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD9120 is a P-Channel MOSFET from Harris Semiconductor. It features a maximum drain-source voltage of 100V and a maximum continuous drain current of 1A at ambient temperature. The on-resistance is rated at 600mΩ maximum with a gate drive of 10V and 600mA drain current.
The device offers a gate-source voltage range of ±20V and a typical gate threshold voltage of up to 4V. It has an input capacitance of 390pF at 25V and a total gate charge of 18nC at 10V, making it suitable for moderate-speed switching applications.
Packaged in a 4-DIP through-hole package, the IRFD9120 is designed for easy integration into PCB designs. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 1.3W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 222+ | $1.35 | $1.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V
4-DIP (0.300", 7.62mm) through-hole
-55°C to 175°C (junction)
RoHS3 compliant per distributor data, but unverified
1A at ambient temperature
600mΩ maximum at 600mA drain current and 10V gate drive
4V maximum at 250µA drain current