| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The IRFD9113 is a P-Channel MOSFET manufactured by Harris Semiconductor, designed for medium-voltage switching applications. It is rated for a maximum drain-to-source voltage of 60V and a continuous drain current of 600mA at ambient temperature. The device exhibits a typical on-resistance of 1.6 Ohms when driven with a gate-source voltage of 10V and a drain current of 300mA.
This MOSFET is housed in a through-hole 4-DIP package with a 0.300-inch (7.62mm) lead pitch, also known as Hexdip or HVMDIP. The package is suitable for manual or wave soldering on standard PCBs. The device has a maximum gate charge of 15 nC at 15V gate drive and an input capacitance of 250 pF at 25V drain-source bias, indicating moderate switching speed.
Typical applications include load switching, power management, and DC-DC converter circuits where a P-Channel device simplifies drive circuitry. The part is RoHS3 compliant and has an MSL rating of 1 (unlimited floor life).
| Qty | Low | High |
|---|---|---|
| 330+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The maximum continuous drain current is 600mA at ambient temperature.
The maximum drain-source on-resistance is 1.6 Ohms at Id=300mA and Vgs=10V.
The IRFD9113 is available in a through-hole 4-DIP package (0.300", 7.62mm), also known as Hexdip or HVMDIP.
The IRFD9113 is marked as RoHS3 compliant, but this status is unverified.