| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,386 pcs
|
2386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD9110PBF is a P-Channel power MOSFET from Vishay Siliconix. It is designed for fast-switching applications and features a drain-source breakdown voltage of 100V, continuous drain current of 700mA at 25°C, and a maximum on-resistance of 1.2Ω at Vgs=-10V and Id=-420mA. The device utilizes MOSFET (metal oxide) technology and is configured as a single transistor.
Electrical ratings include a gate-source threshold voltage range of -2.0V to -4.0V, a maximum gate-source voltage of ±20V, and a maximum total gate charge of 8.7nC at Vgs=-10V. The input capacitance is 200pF at Vds=-25V. Power dissipation is rated at 1.3W at 25°C ambient, and the junction-to-ambient thermal resistance is 120°C/W. The device supports a junction temperature range of -55°C to +175°C and can withstand single-pulse avalanche energy up to 140mJ.
The part is housed in a 4-DIP (0.300", 7.62mm) package, also known as 4-HVMDIP, with through-hole mounting. It is designed for automatic insertion and can be stacked on standard 0.1-inch pin centers. The dual-drain design provides a low thermal resistance path to the mounting surface, making it suitable for power dissipation up to 1W in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.62 | $0.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V (for P-channel, typically -100V).
The continuous drain current is 700mA at Ta=25°C and 490mA at Ta=100°C.
The maximum on-resistance is 1.2Ω at Vgs=-10V and Id=-420mA.
The gate-source threshold voltage ranges from -2.0V to -4.0V at Id=-250µA.
The operating junction temperature range is -55°C to +175°C.
It is available in a 4-DIP (0.300", 7.62mm) package, also designated as 4-HVMDIP, with through-hole mounting.
The part is listed as RoHS3 compliant in the database, though this status is not independently verified.