| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies IRFD9024 is a P-Channel Power MOSFET featuring a Drain-Source Voltage (Vds) of -60V and a typical Drain-Source On-State Resistance (Rds(on)) of 0.28 Ohms at Vgs = -10V. This device is designed for fast switching and ruggedness, making it suitable for various applications.
The MOSFET is housed in a HVMDIP package, which is a low-cost, machine-insertable case style that can be stacked. This package type is beneficial for automatic insertion processes.
Key electrical characteristics include a continuous drain current of up to -1.6A at 25°C and a pulsed drain current of -13A. The operating junction and storage temperature range is from -55°C to +175°C. The device also boasts a repetitive avalanche rated design and dynamic dV/dt rating.
This MOSFET is compliant with RoHS Directive 2002/95/EC. Its specifications make it a cost-effective solution for designers requiring a reliable P-Channel MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V minimum.
HVMDIP (through-hole).
-55 to +175 °C.
-1.6 A at Tc=25°C, -1.1 A at Tc=100°C.
0.28 Ω at Vgs=-10 V.
19 nC maximum (Qg).
140 mJ maximum.