| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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530 pcs
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530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFD9020PBF is a P-Channel power MOSFET from Vishay Siliconix designed for fast switching and ruggedized operation. It features a maximum drain-source voltage of -60 V and continuous drain current of -1.6 A at 25°C, with pulsed current capability up to -13 A. The device offers a low on-resistance of 280 mΩ maximum at Vgs = -10 V and Id = 960 mA, minimizing conduction losses.
Gate charge is 19 nC maximum at Vgs = 10 V, with typical gate-source charge of 5.4 nC and gate-drain charge of 11 nC, enabling efficient gate drive. Input capacitance is 570 pF at Vds = 25 V, and the device can handle single pulse avalanche energy up to 140 mJ, making it suitable for inductive loads.
The MOSFET is housed in a 4-pin HVMDIP through-hole package with dual drain pins serving as a thermal link to the mounting surface. It supports an operating junction temperature range of -55°C to +175°C and dissipates up to 1.3 W at 25°C ambient.
The maximum drain-source voltage (Vds) is -60 V.
The continuous drain current is -1.6 A at 25°C ambient.
The maximum drain-source on-resistance (Rds(on)) is 280 mΩ at Vgs = -10 V and Id = 960 mA.
It is available in a through-hole 4-DIP (0.300", 7.62mm) package, also known as 4-HVMDIP.
The operating junction temperature range is -55°C to +175°C.
RoHS status is listed as RoHS3 Compliant (unverified).
The gate threshold voltage (Vgs(th)) range is -2 V (minimum) to -4 V (maximum) at Id = 1 µA.