| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The IRFD9020 is a P-Channel Power MOSFET manufactured by Vishay Siliconix. It is designed for applications requiring fast switching and ruggedized performance. This MOSFET features a breakdown voltage of 60V and a low drain-source on-state resistance of 0.28 Ohms at a gate-source voltage of -10V.
The device operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 1.3W at 25°C case temperature. It is housed in a HEXDIP package, suitable for automatic insertion and can be stacked on standard 0.1" pin centers. The dual drain serves as a thermal link for power dissipation.
Key electrical characteristics include a gate-source voltage rating of ±20V, a continuous drain current of -1.6A at 25°C, and a pulsed drain current of -13A. The MOSFET also exhibits a typical forward transconductance of 1.3S and an input capacitance of 570pF.
This component is available in lead-free versions, indicated by the 'PbF' suffix in its ordering information. The HEXDIP package is a low-cost, machine-insertable case style.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the IRFD9020 is -60V.
The typical drain-source on-state resistance is 0.28 Ohms when VGS is -10V and ID is -0.96A.
The maximum operating junction and storage temperature is 175°C.
The IRFD9020 is available in the HEXDIP package.
The IRFD9020 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.