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251 pcs
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251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFD9020 is a P-Channel Power MOSFET manufactured by Infineon Technologies. It is designed for applications requiring fast switching and ruggedness, offering a balance of performance and cost-effectiveness.
Key electrical specifications include a drain-source breakdown voltage of 60V and a typical on-state resistance (RDS(on)) of 0.28 Ohms when the gate-source voltage is -10V and the drain current is -0.96A. The device supports a continuous drain current of up to -1.6A at 25°C case temperature.
This MOSFET operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 1.3W at 25°C case temperature. It is housed in a HEXDIP package, suitable for automatic insertion and can be stacked on standard 0.1" pin centers.
The IRFD9020 is also available in lead-free versions, indicated by the 'PbF' suffix in related part numbers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the IRFD9020 is -60V.
The typical drain-source on-resistance (RDS(on)) for the IRFD9020 is 0.28 Ohms when measured at VGS = -10V and ID = -0.96A.
The IRFD9020 can operate at junction temperatures from -55°C to +175°C.
The IRFD9020 is available in a HEXDIP package.
The IRFD9020 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRFD9020 is Level 1.
Yes, the IRFD9020 is available in lead-free versions.